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IRF9610S, SiHF9610S
www.vishay.com
PRODUCT SUMMARY
Power MOSFET
FEATURES
? Surface Mount
Vishay Siliconix
V DS (V)
- 200
?
Available in Tape and Reel
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = - 10 V
11
7
4
Single
3
?
?
?
?
?
?
Dynamic dV/dt Rating
P-Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
D 2 PAK (TO-263)
G
S
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G D
S
D
P-Channel MOSFET
The D 2 PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D 2 PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHF9610S-GE3
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 200
± 20
UNIT
V
Continuous Drain Current
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
- 1.8
-1
A
Pulsed Drain Current a
I DM
-7
Linear Derating Factor
Linear Derating Factor (PCB Mount) d
0.16
0.025
W/°C
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) d
Peak Diode Recovery dV/dt b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
20
3
-5
- 55 to + 150
300 c
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. I SD ? - 1.8 A, dI/dt ? 70 A/μs, V DD ? V DS , T J ? 150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
S12-1558-Rev. D, 02-Jul-12
1
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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